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Kubos Semiconductors from the UK and the UK Compound Semiconductor Centre (CSC) announced that their partnership to commercialize cubic GaN epitaxy for the manufacture of high efficiency green and amber LEDs.
Hexagonal GaN crystals have been widely used to fabricate blue LEDs, but achieving efficient operation in green devices is a problem. Large polarization fields in the active regions of these longer-wavelength structures reduce radiative recombination rates and limit LED efficiency.
Targeting the issue, Kubos Semiconductors develops process based on growing cubic GaN on 3C (cubic) SiC on silicon substrates. Unlike hexagonal GaN, cubic GaN is electric-field free, removing polarization issues and opening the door to the design of efficient LEDs.
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