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ALLOS Semiconductors won this year’s prestigious Compound Semiconductor Industry Substrates and Materials Award for showing breakdown voltages of > 1400 V on GaN-on-Si power semiconductor epiwafers. "We would like to thank all the people who voted for us and everyone who supported us in the last years” emphasizes ALLOS’ CEO Burkhard Slischka. “Since founding ALLOS in 2014 we have been nominated three times and this is the first title we can take home. We understand this as a great acknowledgment that we can stay ahead in innovation even as a fabless company. To receive this award is a great honor and an encouragement to move on."
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