Special Lamp
Machines & Processing
Design
Smart Home
Veeco Instruments and ALLOS Semiconductors have continued their collaboration in developing GaN-on-Si epitaxy wafer for Micro LED production. The two companies have partnered to demonstrate the reproducibility of ALLOS’ 200 mm GaN-on-Si epitaxy wafer technology on Veeco’s Propel® MOCVD reactor.
“To bring Micro LED technology into production, simply presenting champion values for a single metric is insufficient. It is essential to achieve the whole set of specifications for each wafer with excellent repeatability and yield,” said Peo Hansson, senior vice president and general manager of Veeco’s Compound Semiconductor business unit. “This successful joint effort reaffirms the power of combining Veeco’s superior MOCVD expertise with ALLOS’ GaN-on-Silicon epiwafer technology to provide customers a novel, proven and reliable approach to accelerate Micro LED adoption.”
Working Days 8:30am-5:30pm(GTM+8)
Discover the latest trends of lighting industry