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    • Denggle > Lighting News >

    NIST Develops GaN Core-Shell Nanowire UV LED with 5 Times Intensity

    NIST Develops GaN Core-Shell Nanowire UV LED with 5 Times Intensity

    Source： ledinside.com 28 Mar 2019
    UV LEDNISTLED researchnanowire LED

    A research team at National Institute of Standards and Technology (NIST) has developed nanowire UV LEDs that are able to produce five times higher light intensity based on a simpler shell design.


    UV LEDs are used in a growing number of applications such as polymer curing, water purification and medical disinfection. Researchers at NIST have been trying to make nanowire-based LEDs for scanning-probe tips intended for electronics and biology applications. Lately, researchers have been experimenting with nanowire cores made of silicon-doped GaN, which has extra electrons, surrounded by shells made of magnesium-doped GaN, which has a surplus of “holes” for missing electrons. When an electron and a hole combine, energy is released as light, a process known as electroluminescence.


    The research was published in the Nanotechnology Journal with title “UV LEDs Based on p-i-n Core-Shell AlGaN/GaN Nanowire Heterostructures Grown by N-polar Selective Area Epitaxy.” As described article, the brighter LEDs are fabricated from nanowires with a so-called “p-i-n” structure, a tri-layer design that injects electrons and holes into the nanowire. The addition of aluminum to the shell helps confine electrons to the nanowire core, boosting the electroluminescence fivefold.

     

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